Method of forming shared contact structure

Details Method of forming shared contact structure Method of forming shared contact structure

1996-04-15

1998-10-20

Tsai, Jey

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438597, 438637, 148DIG20, H01L 218244

Patent

active

058245790

ABSTRACT:
A shared contact structure (30) is formed to electrically connect three coupling layers (59,60,46) to each other and to an active region (33) in a semiconductor substrate (31). A first coupling layer (59) and a second coupling layer (60) are formed such that they are physically isolated from each other. The second coupling layer (60) is formed such that it is in physical contact with the active region (33). A contact opening (45) is formed, which exposes a portion of coupling layers (59, 60). The third coupling layer (46) is then formed so that it is in electrical contact with the second coupling layer (60) and the first coupling layer (59).

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