Method of manufacturing a semiconductor device

Details Method of manufacturing a semiconductor device Method of manufacturing a semiconductor device

1995-06-05

1998-10-20

Trinh, Michael

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

438162, 438166, H01L 2184

Patent

active

058245731

ABSTRACT:
Nickel is introduced to a peripheral circuit section and a picture element section on an amorphous silicon film to crystallize them. After forming gate electrodes and others, a source, drain and channel are formed by doping impurities, and laser is irradiated to improve the crystallization. After that, electrodes/wires are formed. Thereby an active matrix type liquid crystal display whose thin film transistors (TFT) in the peripheral circuit section are composed of the crystalline silicon film crystal-grown in the direction parallel to the flow of carriers and whose TFTs in the picture element section are composed of the crystalline silicon film crystal-grown in the direction vertical to the flow of carriers can be obtained.

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