Local interconnect for integrated circuits

Details Local interconnect for integrated circuits Local interconnect for integrated circuits

1992-01-31

1994-09-20

Limanek, Robert

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257755, H01L 2348

Patent

active

053492293

ABSTRACT:
Local interconnect is defined in a polycrystalline silicon layer. Openings to underlying conducting regions are made through an insulating layer after the local interconnect conductor definition. A thin extra polycrystalline silicon layer is then deposited over the device and etched back to form polycrystalline silicon sidewall elements. These sidewalls connect the polycrystalline silicon local interconnect conductors to the underlying conductive regions. Standard silicidation techniques are then used to form a refractory metal silicide on the exposed underlying conductive regions, the polycrystalline silicon sidewall elements, and the polycrystalline silicon local interconnect conductors. This results in a complete silicided connection between features connected by the local interconnect conductors.

REFERENCES:
patent: 4476482 (1984-10-01), Scott et al.
patent: 4975756 (1990-12-01), Haken et al.

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