Self-aligned silicide (salicide) process for electrostatic disch

Details Self-aligned silicide (salicide) process for electrostatic disch Self-aligned silicide (salicide) process for electrostatic disch

1997-05-24

1999-08-31

Booth, Richard

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438281, 438301, 438592, H01L 218234

Patent

active

059465735

ABSTRACT:
A method of forming an electrostatic discharge protection device having increased electrostatic discharge responsiveness in lightly-doped source-drain areas and a silicide layer, wherein the silicide layer is not etched so to prevent defects in the lightly-doped source-drain areas.

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patent: 5516717 (1996-05-01), Hsu
patent: 5585299 (1996-12-01), Hsu
patent: 5635746 (1997-06-01), Kimura et al.
Wolf et al., Silicon Processing for the VLSI Era, vol. 1: Process Technology, pp. 535-536, 1986.

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