Method of forming diffusion barriers encapsulating copper

Details Method of forming diffusion barriers encapsulating copper Method of forming diffusion barriers encapsulating copper

1997-03-19

1999-12-28

Dutton, Brian

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

H01L 214763

Patent

active

060081171

ABSTRACT:
A method is provided for forming sidewall diffusion barriers from a dielectric material. A trench or via is formed in a semiconductor device. A layer of dielectric material is deposited over the surfaces of the semiconductor device. The deposited layer of dielectric material is removed from all surfaces except the sidewall of the trench or via, thereby forming the dielectric diffusion barriers on the sidewall. Because dielectric materials have an amorphous structure which does not readily permit diffusion, impurities do not need to be added to the dielectric diffusion barriers. Furthermore, dielectric diffusion barriers produce a smaller RC time delay relative to metallic diffusion barriers having a comparable thickness.

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