MOS transistor of semiconductor device and method of manufacturi

Details MOS transistor of semiconductor device and method of manufacturi MOS transistor of semiconductor device and method of manufacturi

1997-12-11

1999-12-28

Niebling, John F.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438301, H01L 21336

Patent

active

060080973

ABSTRACT:
The present invention relates to a MOS transistor of semiconductor device and method of manufacturing the same and, in particular, to MOS a transistor of semiconductor device and method of manufacturing the same which can reduce asymmetry of drain current due to bias of drain current, facilitate shallow junction and reduce the area to a minimum by forming a source/drain.

REFERENCES:
patent: 4791070 (1988-12-01), Hirao et al.
patent: 5275960 (1994-01-01), Yamaguchi et al.
patent: 5486488 (1996-01-01), Kamiyama
patent: 5705420 (1998-01-01), Ema
patent: 5904516 (1999-05-01), Park
Kimura, S., et al., Short-Channel-Effect-Suppressed Sub-0.1-.mu.m Grooved-Gate MOSFET's with W Gate., Jan. 1995, pp. 94-100.
Kinmura, S. et al., Short-Channel-Effect-Suppressed sub-0.1 -micrometer Grooved-Gate MOSFET's with W Gate., pp. 94-100, Jan. 1995.

Affiliated with

Also associated with

Rating

MOS transistor of semiconductor device and method of manufacturi does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with MOS transistor of semiconductor device and method of manufacturi, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and MOS transistor of semiconductor device and method of manufacturi will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2381831