Method of forming electrostatic discharge protection structure o

Details Method of forming electrostatic discharge protection structure o Method of forming electrostatic discharge protection structure o

1998-07-30

1999-12-28

Bowers, Charles

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438279, 438200, 438253, 438396, H01L 218238

Patent

active

060080817

ABSTRACT:
A dynamic random access memory's (DRAM's) electrostatic discharge (ESD) protection circuit structure and its method of manufacture, wherein the ESD protection circuit and the capacitors are formed at the same time. The ESD protection circuit has a heavily doped drain structure so that hot carriers can be recruited for discharging electrostatics and a better electrostatic discharge protection can be achieved. Furthermore, no additional electrostatic discharge implant operations are necessary.

REFERENCES:
patent: 5455444 (1995-10-01), Hsue
patent: 5792703 (1998-08-01), Bronner et la.
patent: 5956594 (1999-09-01), Yang e tal.

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