Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Radiation sensitive composition or product or process of making
Patent
1997-06-17
1999-12-28
McPherson, John A.
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Radiation sensitive composition or product or process of making
430311, 430947, G03C 1492
Patent
active
060079630
ABSTRACT:
A method of producing a patterned array of features, in particular, gate apertures, in the size range 0.4-0.05 .mu.m using projection lithography and extreme ultraviolet (EUV) radiation. A high energy laser beam is used to vaporize a target material in order to produce a plasma which in turn, produces extreme ultraviolet radiation of a characteristic wavelength of about 13 nm for lithographic applications. The radiation is transmitted by a series of reflective mirrors to a mask which bears the pattern to be printed. The demagnified focused mask pattern is, in turn, transmitted by means of appropriate optics and in a single exposure, to a substrate coated with photoresists designed to be transparent to EUV radiation and also satisfy conventional processing methods.
REFERENCES:
patent: H66 (1986-05-01), White
patent: 3665241 (1972-05-01), Spindt et al.
patent: 3755704 (1973-08-01), Spindt et al.
patent: 3789471 (1974-02-01), Spindt et al.
patent: 3812559 (1974-05-01), Spindt et al.
patent: 3873341 (1975-03-01), Janus
patent: 4515886 (1985-05-01), Yamaoka et al.
patent: 4588801 (1986-05-01), Harrah et al.
patent: 4619894 (1986-10-01), Bozler et al.
patent: 4741989 (1988-05-01), Niwa et al.
patent: 4822716 (1989-04-01), Onishi et al.
patent: 5003567 (1991-03-01), Hawryluk et al.
patent: 5039593 (1991-08-01), Zeigler et al.
patent: 5064396 (1991-11-01), Spindt
patent: 5178989 (1993-01-01), Heller et al.
patent: 5220590 (1993-06-01), Bruning et al.
patent: 5291339 (1994-03-01), Mochimaru et al.
patent: 5372908 (1994-12-01), Hayase et al.
patent: 5380621 (1995-01-01), Dichiara et al.
patent: 5401614 (1995-03-01), Dichiara et al.
patent: 5426016 (1995-06-01), Fujioka et al.
patent: 5482817 (1996-01-01), Dichiara et al.
patent: 5499282 (1996-03-01), Silfvast
patent: 5554485 (1996-09-01), Dichiara et al.
patent: 5849465 (1998-12-01), Uchida et al.
Microelectronic Engineering, 21 (1993) 467-470 Elsevier Peters, D. et al. "Fabrication of 0.4 um grid apertures for field-emission array cathodes".
Kubiak, G.D., "XUV Resist Characterization: Studies With a Laser Plasma Source" Proc. SPIE-Int. Soc. Opt. Eng. (1990) pp. 283-291.
Kubiak, et al., "Soft X-ray Resist Characterization: Studies With a Laser Plasma X-ray Source" Proc. SPIE-Int. Soc. Opt. Eng. (1990) pp. 272-281.
Felter T. E.
Kubiak Glenn D.
Ashton Rosemary
Evans Timothy
McPherson John A.
Olsen Kurt
Sandia Corporation
LandOfFree
Method for extreme ultraviolet lithography does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for extreme ultraviolet lithography, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for extreme ultraviolet lithography will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2381170