Plasma develoment of resists

Details Plasma develoment of resists Plasma develoment of resists

1980-04-30

1981-12-22

Willis, Jr., P. E.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Electron beam imaging

156643, 430191, 430325, 430326, G03C 518, G03C 534

Patent

active

043071783

ABSTRACT:
Exposed patterns in phenol-formaldehyde Novolak resin/diazo ketone resist layers are developed in an oxygen plasma by treating the resist layers, prior to development, with a magnesium salt. This produces a negative pattern. Positive patterns are produced by combining the process with decarboxylation of the exposed areas followed by blanket exposure.

REFERENCES:
patent: 3705055 (1972-12-01), Christensen et al.
patent: 3867216 (1975-02-01), Jacob
patent: 4007047 (1977-02-01), Kaplan et al.
patent: 4132586 (1979-01-01), Schaible et al.
patent: 4201579 (1980-05-01), Robinson et al.
patent: 4241165 (1980-12-01), Hughes et al.
"Pattern/Mask Generation Trends" Semiconductor International, Jul.-Aug. 1979, pp. 9, 10.
IBM Technical Disclosure Bulletin, vol. 21, No. 3, Aug. 1978, "Aluminum Etch Mask for Plasma Etching", Blakeslee et al. pp. 1256-1258.
IBM Technical Disclosure Bulletin, "Process for Obtaining Undercutting of a Photoresist to Facilitate Lift Off", by Canavello et al., vol. 19, No. 10, Mar. 1977.

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