Semiconductor device having metal silicide film

Details Semiconductor device having metal silicide film Semiconductor device having metal silicide film

1997-05-13

2000-04-18

Booth, Richard

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438286, 438162, 438528, H01L 2144

Patent

active

060514949

ABSTRACT:
A semiconductor device in which parasitic resistance of source/drain regions can be reduced than the parasitic resistance of the drain region, and manufacturing method thereof, can be obtained. In the semiconductor device, inactivating ions are implanted only to the source region of the semiconductor layer, so as to damage the crystal near the surface of the semiconductor layer, whereby siliciding reaction is promoted. Therefore, in the source region, a titanium silicide film which is thicker can be formed.

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