Semiconductor device and method of producing the same

Details Semiconductor device and method of producing the same Semiconductor device and method of producing the same

1997-09-25

2000-04-18

Dang, Trung

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438424, 438294, 438688, 148DIG50, H01L 21336

Patent

active

060514728

ABSTRACT:
A semiconductor device of the present invention and using trench isolation includes contact holes. Spacers are formed on the shoulder portions of a device region exposed in the contact holes. To form the spacers, a silicon oxide film is formed and then etched by anisotropic etching such that the film does not fill up the contact holes. The anisotropic etching may be effected after oxidation. With this structure, it is possible to prevent junction leakage current from increasing.

REFERENCES:
patent: 4862232 (1989-08-01), Lee
patent: 4963502 (1990-10-01), Teng et al.
patent: 5132755 (1992-07-01), Ueno
patent: 5275965 (1994-01-01), Manning
patent: 5604159 (1997-02-01), Cooper et al.
patent: 5652176 (1997-07-01), Maniar et al.
C. G. Jambotkar, "FET Structure", IBM Technical Disclosure Bulletin, vol. 24. No. 1A, Jun. 1981.

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