Preventing boron penetration through thin gate oxide of P-channe

Details Preventing boron penetration through thin gate oxide of P-channe Preventing boron penetration through thin gate oxide of P-channe

1997-11-12

2000-04-18

Brown, Peter Toby

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438305, 438307, 438308, 438530, 438532, 438515, 438516, H01L 218238

Patent

active

060514604

ABSTRACT:
A CMOS device and a method for forming the same is provided so as to overcome the problem of boron penetration through the thin gate oxide of P-channel devices. Silicon is implanted into the polysilicon gate electrode of the PMOS device functioning as a diffusion barrier for preventing boron penetration through the thin gate oxide and into the semiconductor substrate. As a result, the reliability of the CMOS device will be enhanced.

REFERENCES:
patent: 5397909 (1995-03-01), Moslehi
patent: 5567638 (1996-10-01), Lin et al.
patent: 5620922 (1997-04-01), Yoshida et al.
patent: 5652166 (1997-07-01), Sun et al.
patent: 5744371 (1998-04-01), Kadosh et al.

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