Semiconductor device with particular metal silicide film

Details Semiconductor device with particular metal silicide film Semiconductor device with particular metal silicide film

1995-05-05

1998-01-06

Fahmy, Wael

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257382, 257385, H01L 2976, H01L 2994, H01L 31062

Patent

active

057058458

ABSTRACT:
In a metal silicide film, excessive silicon is contained and precipitated in silicide grain boundaries thereof. The thus precipitated excessive silicon makes a diffusion path of impurities, which extends along WSi.sub.2 grain interfaces, discontinuous in the metal silicide film. As a result, the impurities do not diffuse laterally in the metal silicide film even after a heat treatment is performed.

REFERENCES:
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patent: 4786611 (1988-11-01), Pfiester
patent: 4912542 (1990-03-01), Suguro
patent: 5162884 (1992-11-01), Liou et al.
patent: 5190886 (1993-03-01), Asahina
patent: 5268590 (1993-12-01), Pfiester et al.
patent: 5341014 (1994-08-01), Fujii et al.
patent: 5355010 (1994-10-01), Fujii et al.
patent: 5459101 (1995-10-01), Fujii et al.
Fujii et al; "Dual (n.sup.+ /p.sup.+) Polycide Gate Technology Using Silicon Rich WSi.sub.x . . . "; VLSI Technology Digest of Technical papers; Jun. 1994.

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