Semiconductor memory including an output latch having hysteresis

Static information storage and retrieval – Read/write circuit – Having particular data buffer or latch

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Other Related Categories

365203, 365205, 307290, G11C 700

Type

Patent

Status

active

Patent number

048315907

Description

ABSTRACT:
A semiconductor memory device in which an output data bus (14) is precharged at a middle potential level prior to reading out data. A Schmidt Trigger circuit (39) having a hysteresis loop in input-output characteristics is provided between the output data bus (14) and a data output buffer (15). This allows the data output buffer (15) to maintain a stable output (16) while precharging the data bus (14).

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patent: 4656610 (1987-04-01), Yoshida et al.
patent: 4706218 (1987-11-01), Sodd
U. Tietze et al, "Halbleiter-Schaltungstechnik", Springer-Verlag Berlin, 1976, pp. 476-506.
"A Fault-Tolerant 30 ns/375 mW 16K x 1 NMOS Static RAM", Kim C. Hardee et al, Journal of Solid-State Circuits, vol. SC-16, No.5, Oct. 1981, pp. 435-443.

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