Method for producing a semiconductor gate conductor having an im

Details Method for producing a semiconductor gate conductor having an im Method for producing a semiconductor gate conductor having an im

1993-11-08

1997-05-27

Fourson, George

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438306, 438528, H01L 21265

Patent

active

056331770

ABSTRACT:
A PMOS device is provided having a diffusion barrier placed within the polysilicon gate. The diffusion barrier is purposefully deposited to a concentration peak density within the gate which is deeper than subsequently placed impurity dopant. The barrier comprises germanium atoms placed in fairly close proximity to one another within the gate conductor, and the impurity dopant comprises an ionized compound of BF.sub.2 subsequently placed as boron within the gate and source/drain region, at least a majority and preferably greater than eighty percent of which are placed shallower within the gate than the germanium atoms. The barrier region substantially prevents or retards penetration of boron atoms through the gate oxide and into the channel region. Thus, the barrier helps prevent change in channel concentration and problems associated with boron penetration such as flatband voltage (Vfb) and threshold voltage (Vth) shift.

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