Semiconductor memory

Static information storage and retrieval – Read/write circuit – Having particular data buffer or latch

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365 51, 365230, G11C 1140

Patent

active

RE0327085

ABSTRACT:
A random access type semiconductor memory comprises a pair of data line halves arranged in parallel, a plurality of word lines orthogonal to the data line halves, a multiplicity of memory cells, each of which is arranged at either one of the cross points between the data line halves and each of the word lines, a differential amplifier to which signals on the data line halves are differentially applied, and a main amplifier to which output signals on the data line halves are differentially applied, thereby detecting the content of a desired memory cell.

REFERENCES:
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patent: 3383663 (1968-05-01), David
patent: 3506969 (1970-04-01), Abbas
patent: 3678473 (1972-07-01), Wahlstrom
patent: 3771148 (1973-11-01), Aneshansley
patent: 3882326 (1975-05-01), Kruggel
patent: 4025907 (1977-05-01), Karp et al.
IBM Tech. Dis. Bul., vol. 16, No. 7, p. 2418, "Interleaved Memory Array" by W. K. Hoffman.
Japanese Patent Publication No. 22387/1969, published Sep. 25, 1969, by Tanaka et al.

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