Read-only memory device having bit line discharge circuitry and

Details Read-only memory device having bit line discharge circuitry and Read-only memory device having bit line discharge circuitry and

1998-12-17

2000-01-25

Nguyen, Tan T.

Static information storage and retrieval

Read/write circuit

Accelerating charge or discharge

365104, 36518525, 365 94, G11C 700

Patent

active

060184876

ABSTRACT:
A mask ROM of the invention discharges bit lines selectively before a bit line precharge operation in response to an externally applied command. A column decoder selects one of bit lines in response to column select signals. A discharge control circuit generates a first discharge control signal in response to the command. A discharge predecoder generates a plurality of second discharge control signals by logically combining the first discharge control signal with the column select signals. A bit line discharge circuit selectively discharges the bit lines in response to the second discharge control signals. The mask ROM is free from bit line coupling due to the selection of particular memory cells, the cell selection sequence and the programmed states of the selected cells, leading to an improvement in read speed.

REFERENCES:
patent: 4797857 (1989-01-01), Schreck et al.
patent: 4951255 (1990-08-01), Hobbs
patent: 5278795 (1994-01-01), Barbu et al.
patent: 5453955 (1995-09-01), Sakui et al.
patent: 5627788 (1997-05-01), Chang et al.
patent: 5703809 (1997-12-01), Hull et al.
patent: 5703820 (1997-12-01), Kohno
patent: 5751657 (1998-05-01), Hotta
patent: 5926426 (1999-07-01), Morimoto

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