MOS memory point

Details MOS memory point MOS memory point

1998-10-15

2000-01-25

Dinh, Son T.

Static information storage and retrieval

Systems using particular element

Semiconductive

365181, G11C 1134

Patent

active

060184752

ABSTRACT:
The present invention relates to the use of a conventional MOS transistor as a memory point in which, during programming, the well of the MOS transistor is connected to a reference potential, the drain and the source are connected to a current source adapted to bias the drain and source junctions in reverse and in avalanche so that the space charge region extends along the entire channel length, the gate is set to the reference potential if the memory point does not have to be programmed and to a distinct potential if the memory point has to be programmed; and during the reading, circuitry is provided to detect a high or low impedance state between the gate and the well.

REFERENCES:
patent: 5329481 (1994-07-01), Seevinck et al.
patent: 5434816 (1995-07-01), Levi
patent: 5796650 (1998-08-01), Wik et al.

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