Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1996-09-24
1998-07-28
Niebling, John
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438 46, 438102, 438656, H01L 2128
Patent
active
057862699
ABSTRACT:
A II-VI group compound semiconductor device having a p-type Zn.sub.x Mg.sub.1-x S.sub.y Se.sub.1-y (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1) semiconductor layer, on which an electrode layer is formed with at least metallic nitride layer lying between the semiconductor layer and the electrode layer.
REFERENCES:
patent: 5213998 (1993-05-01), Qiu et al.
Fan, Y., et al. "Graded band gap ohmic contact to p-ZnSe," Appl. Phys. Lett. (1992) 61 (26): 3160-62.
Haase, M. et al. "Short wavelength II-VI laser diodes," Inst. Phys. Conf. Ser. (1991) No. 120: Chap. 1, pp. 9-16 (paper presented at Int. Symp. GaAs and Related Compounds, Seattle).
Haase, M.A., et al. "Blue-green laser diodes," Appl. Phys. Lett. (1991) 59 (11): 1272-74.
Hiei, F., et al. "Ohmic contacts to p-type AnSe using ZnTe/ZnSe multiquantum wells," Electronic Letters (1993) 29 (10): 878-79.
Jeon, H., et al. "Blue-green injection laser diodes in (Zn, Cd) Se/ZnSe quantum wells," Appl. Phys. Lett. (1991) 59 (27): 3619-21.
Lansari, Y., et al. "Improved ohmic contacts for p-type ZnSe and related p-on-n diode structures," Appl. Phys. Lett. (1992) 61 (21): 2554-56.
Ohtsuka, T., et al. "Growth and Characterization of p-type CdSe," Preliminary Drafts of Lecture (1993) vol. 1, (presented at the 54th Conference on Applied Physics, Scientific Lecture Meeting) (English translation attached).
Koide Yasuo
Murakami Masanori
Teraguchi Nobuaki
Tomomura Yoshitaka
Niebling John
Sharp Kabushiki Kaisha
Turner Kevin F.
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