Semiconductor device and method of fabricating thereof

Details Semiconductor device and method of fabricating thereof Semiconductor device and method of fabricating thereof

1997-12-12

2000-01-25

Tsai, Jey

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438424, 438436, H01L 21336, H01L 2176

Patent

active

060178000

ABSTRACT:
An insulator (5) is a frame element for covering the outer edges of the active region (3), and protrudes upwardly above the surface of a semiconductor substrate (1) to constitute part of the inner walls of a trench (9) filled with an insulating film (2). A gate oxide film (21) is formed on the surface of the active region (3) adjacent the center thereof. The etching rate of the insulator (5) is lower than that of the insulating film (2). The insulator (5) prevents the sidewalls of the insulating film (2) from being etched away to suppress the formation of the depression positioned lower than the surface of the semiconductor substrate (1), thereby to alleviate influences upon an electric field adjacent the outer edges of the active region (3).

REFERENCES:
patent: 5677233 (1997-10-01), Abiko
patent: 5868870 (1999-02-01), Fazan et al.
patent: 5895254 (1999-04-01), Huang et al.
patent: 5911109 (1999-06-01), Razouk et al.
A. Chatterjee, et al., IEDM, pp. 829-832, "A Shallow Trench Isolation Using Locos Edge for Preventing Corner Effects for 0.25/0.18 .mu.m CMOS Technologies and Beyond", 1996.

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