Method of forming a Ta.sub.2 O.sub.5 dielectric layer with amorp

Details Method of forming a Ta.sub.2 O.sub.5 dielectric layer with amorp Method of forming a Ta.sub.2 O.sub.5 dielectric layer with amorp

1997-06-24

2000-01-25

Niebling, John F.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438785, 257310, H01L 218242

Patent

active

060177896

ABSTRACT:
A method of forming a dielectric layer includes, a) chemical vapor depositing a dielectric layer of Ta.sub.2 O.sub.5 atop a substrate; and b) providing a predominately amorphous diffusion barrier layer over the Ta.sub.2 O.sub.5 dielectric layer. A method of forming a capacitor includes, a) providing a node to which electrical connection to a capacitor is to be made; b) providing a first electrically conductive capacitor plate over the node; c) chemical vapor depositing a capacitor dielectric layer of Ta.sub.2 O.sub.5 over the first electrically conductive capacitor plate; and d) providing a predominately amorphous diffusion barrier layer over the Ta.sub.2 O.sub.5 dielectric layer. A capacitor construction is also disclosed. The preferred amorphous diffusion barrier layer is electrically conductive and constitutes a metal organic chemical vapor deposited TiC.sub.x N.sub.y O.sub.z, where "x" is in the range of from 0.01 to 0.5, and "y" is in the range of from 0.99 to 0.5, and "z" is in the range of from 0 to 0.3, with the sum of "x", "y" and "z" equalling about 1.0. Such is preferably deposited by utilizing a gaseous titanium organometallic precursor of the formula Ti(NR.sub.2).sub.4, where R is selected from the group consisting of H and a carbon containing radical, and utilizing deposition conditions of from 200.degree. C. to 600.degree. C. and from 0.1 to 100 Torr.

REFERENCES:
patent: 5057447 (1991-10-01), Paterson
patent: 5082797 (1992-01-01), Chan et al.
patent: 5142438 (1992-08-01), Reinberg et al.
patent: 5162248 (1992-11-01), Dennison et al.
patent: 5187557 (1993-02-01), Zenke
patent: 5192589 (1993-03-01), Sandhu
patent: 5234857 (1993-08-01), Kim et al.
patent: 5246881 (1993-09-01), Sandhu et al.
patent: 5278091 (1994-01-01), Fazan et al.
patent: 5279985 (1994-01-01), Kamiyama
patent: 5302540 (1994-04-01), Ko et al.
patent: 5324679 (1994-06-01), Kim et al.
patent: 5338700 (1994-08-01), Dennison et al.
patent: 5340763 (1994-08-01), Dennison et al.
patent: 5340765 (1994-08-01), Dennison et al.
patent: 5348894 (1994-09-01), Gnade et al.
patent: 5471364 (1995-11-01), Summerfelt et al.
patent: 5471418 (1995-11-01), Tanigawa
patent: 5489548 (1996-02-01), Nishioka et al.
patent: 5504041 (1996-04-01), Summerfelt et al.
patent: 5571572 (1996-11-01), Sandhu
patent: 5665431 (1997-09-01), Narasimhan
Eizenberg et al., "TiCN: A new chemical vapor deposited contact barrier metallization of submicron devices"; Applied Physics Letters, vol. 65, No. 19; pp. 2416-2418, Nov. 1994.
H. Watanabe, et al. "A New Cylindrical Capacitor Using Hemispherical Crained SI (HSG-Si) for 256Mb DRAMs", Apr. 1992 IEEE pp. 259-262.
Aoki, Hidemitsu et al., Jpn. J. Appl. Phys. 32, 376 (Jan. 1993).
T. Kamiyama et al., IEDM Tech. Dig., Sep. 1991, 827.
P.C. Fazan, et al., IEDM Tech. Dig., Apr. 1992, 263.
L.R. Doolittle, et al., Nucl. Instrum. Methods, B 15, 227 (1986). Month unavailable.
G.S. Sandhu, et al., Appl. Phys. Lett., 62, 240 (Jan. 1993).
Ishihara, K. et al., Characterization of CVD-TiN Films Prepared with Metalorganic Source, vol. 29, No. 10, Oct., 1990, pp. 2103-2105.
Katz, A. et al., The Immunence of Ammonia on rapid-thermal low-pressure metalorganic chemical vapor deposited TiN.sub.x films from tetrakis (dimethylamido) titanium precursor onto InP, J. Appl. Phys. 7(2), Jan. 15, 1992, pp. 993-1000.
Zaima, et al., Conduction Mechanism of Leakage Current in TA.sub.2 0.sub.5 Film on Si Prepared by LPCVD, pp 2876-2879, Journal Electrochemical Society, vol. 137, No. 9, Sep. 1990.

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