Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1996-12-31
2000-01-25
Fahmy, Wael
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438232, 438514, 438224, H01L 218238
Patent
active
06017787&
ABSTRACT:
A twin tub integrated circuit and method for its formation are disclosed. A portion of the substrate is covered by photoresist while an n region is formed, illustratively, by ion implantation. Then the n region is covered with a protective material, illustratively a spin on glass or another photoresist. The previously-formed photoresist is removed and a p-type implant is performed to create an p region. When all the protective layers are removed, both regions have upper surfaces which are co-planar. The co-planar surfaces, a departure from previous practice, make submicron lithography easier. The regions are annealed to form twin tubs.
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Chittipeddi Sailesh
Cochran William Thomas
Knight Stephen
Duong Khanh
Fahmy Wael
Lucent Technologies - Inc.
McLellan Scott W.
Meder Martin G.
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