Device fabrication using DUV/EUV pattern delineation

Details Device fabrication using DUV/EUV pattern delineation Device fabrication using DUV/EUV pattern delineation

1994-10-20

1996-04-23

Duda, Kathleen

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Forming nonplanar surface

430311, 430396, 2504922, 2504923, G03F 720

Patent

active

055102301

ABSTRACT:
The fabrication of integrated circuit devices built to design rules of 0.18 .mu.m and below uses patterning radiation in the EUV spectrum. Optimized processing conditions take advantage of independently developed EUV characteristics such as short resist absorption lengths.

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patent: 5328784 (1994-07-01), Fukuda
patent: 5339346 (1994-08-01), White
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D. M. Tennant, et al., "Defect repair for soft x-ray projection lithography masks", J. Vac. Sci. Technol. B 10(6) Nov./Dec. 1992.
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G. N. Taylor, et al., "Self-assembly: its use in at-the-surface imaging schemes for microstructure fabrication in resist films", Microelectronic Engineering vol. 23, p. 259 (1994).

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