Method for producing a channel region layer in a voltage control

Details Method for producing a channel region layer in a voltage control Method for producing a channel region layer in a voltage control

1996-07-09

1998-07-28

Chaudhari, Chandra

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438546, 438931, H01L 21336

Patent

active

057862516

ABSTRACT:
In a method for producing a channel region layer in a SiC-layer for providing a voltage-controlled semiconductor device a layer of silicon being one of a) polycrystalline and b) amorphous is applied on top of the SiC-layer, an aperture is etched in the silicon layer extending to the SiC-layer, a surface layer of a certain thickness of the silicon layer is oxidized, and the lateral extension of the channel region layer is determined by removing the oxidized layer and carrying out a further implantation into the area exposed by the so formed enlarged aperture.

REFERENCES:
patent: 4757028 (1988-07-01), Kondoh et al.
patent: 5202273 (1993-04-01), Nakmura
patent: 5384270 (1995-01-01), Ueno
patent: 5510281 (1996-04-01), Ghezzo et al.

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