Method for forming a stable SRAM cell using low backgate biased

Details Method for forming a stable SRAM cell using low backgate biased Method for forming a stable SRAM cell using low backgate biased

1996-02-28

1998-07-28

Nguyen, Tuan H.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438142, 438200, 438217, H01L 21336

Patent

active

057862451

ABSTRACT:
A more stable SRAM cell is provided by reducing the backgate biased threshold voltage of the SRAM's select transistor. In some embodiments, masking layers are used during dopant implantation of the select transistors to minimize the net dopant concentration in the select transistor's channel region. Minimizing this net dopant concentration lowers the backgate biased threshold voltage of the select transistor without any reduction in its on-resistance. Another embodiment may be used to achieve increased stability for SRAM cells formed with CMOS technology. The masking layers used to form N- and P-type well regions are overlapped such that a third well formed intermediate the N- and P-type wells has a dopant concentration equal to the net concentrations of the respective N- and P-type wells. This third well, therefore, may be used as discussed above to achieve a lower backgate biased threshold voltage. Yet another embodiment is provided in which a lower backgate biased threshold voltage is achieved by reducing a portion of the length of the channel region while the lengths of other portions of the channel are unaltered.

REFERENCES:
patent: 3868274 (1975-02-01), Hubar et al.
patent: 4052229 (1977-10-01), Pashley
patent: 4591890 (1986-05-01), Lund et al.
patent: 4682408 (1987-07-01), Takebayashi
patent: 4697332 (1987-10-01), Joy et al.
patent: 5360749 (1994-11-01), Anjum et al.
patent: 5373863 (1994-12-01), Jeon
patent: 5416038 (1995-05-01), Hsue
patent: 5484742 (1996-01-01), Urai

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