Radiant energy – Irradiation of objects or material – Ion or electron beam irradiation
Patent
1990-07-13
1993-08-31
Dzierzynski, Paul M.
Radiant energy
Irradiation of objects or material
Ion or electron beam irradiation
250306, 250307, 250310, 2504422, G01N 23225
Patent
active
052411869
ABSTRACT:
A method of preventing damages of a semiconductor having an insulator film at its surface caused by holes induced in the insulator film and move to and are trapped at or near the interface between the insulator film and a substrate upon applying surface treatment for the surface of the semiconductor, as well as an apparatus suitable to practicing the method are disclosed. The surface treatment method comprises trapping to eliminate the holes in the insulator film by an electric field before the movement of the holes at or near the interface, neutralizing the induced holes by re-combination, or previously forming a hole trapping level in the insulator film thereby trapping the induced holes to the trapping level, etc.
REFERENCES:
patent: 3497775 (1970-02-01), Ono
patent: 4088799 (1978-05-01), Kurtin
patent: 4116721 (1978-09-01), Ning et al.
patent: 4795529 (1989-01-01), Kawasaki
patent: 4851668 (1989-07-01), Ohno et al.
patent: 4956043 (1990-09-01), Kanetomo et al.
patent: 4957602 (1990-09-01), Binder et al.
patent: 4976843 (1990-12-01), Ward et al.
patent: 4992661 (1991-02-01), Tamura et al.
Applied Physics Letters, vol. 36, No. 1 Jan. 1980 pp. 81-84; Ma et al.
IBM Technical Disclosure Bulletin, vol. 26, No. 9, Feb. 1984 pp. 4832-4833, Pak et al.
Mizutani Tatsumi
Suzuki Keizo
Yunogami Takashi
Dzierzynski Paul M.
Hitachi , Ltd.
Nguyen Kiet T.
LandOfFree
Surface treatment method and apparatus therefor does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Surface treatment method and apparatus therefor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Surface treatment method and apparatus therefor will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2299620