Method of forming a wide upper top spacer to prevent salicide br

Details Method of forming a wide upper top spacer to prevent salicide br Method of forming a wide upper top spacer to prevent salicide br

1998-09-17

1999-07-13

Bowers, Charles

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438305, 438595, H01L 21336

Patent

active

059239867

ABSTRACT:
A method of forming a wide top spacer (50 20S 40A) that prevents salicide bridging. The wide top spacer (50) consists of a first spacer (20S) and an upper spacer (40A) (half spacer). The upper spacer (40A) is formed by covering the first spacer with a sacrificial layer (30) and forming the upper spacer (40A) on a top portion of the first spacer. During a subsequent salicide process, the upper spacer (40A) prevents sputtered metal (60) from forming of an area (51) on the first spacer under the upper spacer (40A). This prevents shorting between the S/D (12) and the gate (18).

REFERENCES:
patent: 5093275 (1992-03-01), Tasch, Jr. et al.
patent: 5674774 (1997-10-01), Pasch et al.
patent: 5693550 (1997-12-01), Torii
patent: 5710450 (1998-01-01), Chau et al.
patent: 5780348 (1998-07-01), Lin et al.
patent: 5789298 (1998-08-01), Gardner et al.
patent: 5840609 (1998-11-01), Hyeon et al.
patent: 5846857 (1998-12-01), Ju

Affiliated with

Also associated with

Rating

Method of forming a wide upper top spacer to prevent salicide br does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming a wide upper top spacer to prevent salicide br, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming a wide upper top spacer to prevent salicide br will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2287562