Method for characterizing defects on semiconductor wafers

Details Method for characterizing defects on semiconductor wafers Method for characterizing defects on semiconductor wafers

1997-02-03

1999-07-13

Hardy, David B.

Optics: measuring and testing

By configuration comparison

With comparison to master, desired shape, or reference voltage

356448, 356237, G01N 2188

Patent

active

059234300

ABSTRACT:
A method is described for characterizing defects on a test surface of a semiconductor wafer using a confocal-microscope-based automatic defect characterization (ADC) system. The surface to be tested and a reference surface are scanned using a confocal microscope to obtain three-dimensional images of the test and reference surfaces. The test and reference images are converted into sets of geometric constructs, or "primitives," that are used to approximate features of the images. Next, the sets of test and reference primitives are compared to determine whether the set of test primitives is different from the set of reference primitives. If such a difference exists, then the difference data is used to generate defect parameters, which are then compared to a knowledge base of defect reference data. Based on this comparison, the ADC system characterizes the defect and estimates a degree of confidence in the characterization.

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