Method of in line intra-field correction of overlay alignment

Details Method of in line intra-field correction of overlay alignment Method of in line intra-field correction of overlay alignment

1998-06-12

1999-04-13

Kim, Robert

Optics: measuring and testing

By alignment in lateral direction

356401, 250548, 355 55, G01B 1100

Patent

active

058943501

ABSTRACT:
This invention describes a method of making intra-field corrections to the alignment of a step and repeat projection system used to expose image fields on an integrated circuit wafer. A first pattern having first image fields and first alignment marks is formed on a wafer. A mask having a second image field and second alignment marks is projected on the wafers, having a layer of photoresist formed thereon, using light which will not expose the photoresist. The relative location of the second alignment marks to the second image field is the same as the relative location of the first alignment marks to the first image field. A detectors, comprising an interferometer, determines the displacement vector between the first alignment marks and the corresponding second alignment marks. The displacement vectors are fed to a computer which computes a translation correction, a rotation correction, and a magnification correction for the alignment of the mask to the wafer. After the corrections are made the photoresist is exposed by projecting light which will expose the photoresist.

REFERENCES:
patent: 4664524 (1987-05-01), Hattori et al.
patent: 4768883 (1988-09-01), Waldo et al.
patent: 5444538 (1995-08-01), Pellegrini
patent: 5656402 (1997-08-01), Kasuga

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