Method of making semiconductor device with air gap between the g

Details Method of making semiconductor device with air gap between the g Method of making semiconductor device with air gap between the g

1998-02-27

1999-04-20

Booth, Richard A.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438585, 438595, H01L 213205, H01L 21336

Patent

active

058952462

ABSTRACT:
A semiconductor device includes a semiconductor substrate of a first conductivity type having an active region and an inactive region, a gate electrode formed on the semiconductor substrate over the active region, wherein a gap exists between the semiconductor substrate and the gate electrode, and source and drain regions formed beneath a surface of the semiconductor substrate at both sides of the gate electrode.

REFERENCES:
patent: 5395779 (1995-03-01), Hong
patent: 5578513 (1996-11-01), Maegawa
patent: 5693545 (1997-12-01), Chung et al.
patent: 5736446 (1998-04-01), Wu
patent: 5770507 (1998-06-01), Chen et al.
M. Togo et al., "A Gate-side Air-gap Structure (GAS) to Reduce the Parasitic Capacitance in MOSFETs"; 1996 Symposium on VLSI Technology, Digest of Technical Papers; pp. 38 and 39; Jun. 11-13, 1996.

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