Methods of forming semiconductor-on-insulator substrates

Details Methods of forming semiconductor-on-insulator substrates Methods of forming semiconductor-on-insulator substrates

1996-06-13

1999-04-13

Bowers, Jr., Charles L.

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Total dielectric isolation

438413, H01L 2184

Patent

active

058937455

ABSTRACT:
Methods of forming semiconductor-on-insulator field effect transistors include the steps of forming an insulated trench containing a semiconductor region therein and an insulating region mesa at a bottom of the trench, so that the semiconductor region has relatively thick regions adjacent the sidewalls of the trench and has a relatively thin region above the mesa. Dopants can then be added to the thick regions to form low resistance source and drain regions on opposite sides of the thin region which acts as the channel region. Because the channel region is thin, low junction capacitance can also be achieved. An insulated gate electrode can also be formed on the face of the semiconductor region, above the channel region, and then source and drain contacts can be formed to the source and drain regions to complete the device. Preferably, the step of forming the trench containing a semiconductor region comprises the steps of patterning an oxidation blocking layer having an opening therein, on a face of a semiconductor substrate, and then oxidizing the substrate at the face to form an electrically insulating region in the opening and adjacent a periphery of the oxidation blocking layer. These steps are performed so that a portion of the electrically insulating region in the opening is thinner than a portion of the electrically insulating region extending adjacent the periphery of the oxidation blocking layer. Next, the oxidation blocking layer is removed from the face of the substrate and then the electrically insulating region is planarized. The planarized insulating region is then used as a substrate by planarizing a back face of the semiconductor substrate until the insulating region is reached. At this point a trench filled with a semiconductor material will remain in the insulating region and this remaining semiconductor material can be used as an SOI substrate.

REFERENCES:
patent: 5011783 (1991-04-01), Ogawa et al.
patent: 5436173 (1995-07-01), Houston
patent: 5496764 (1996-03-01), Sun

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