Transistor structure incorporating a solid deuterium source for

Details Transistor structure incorporating a solid deuterium source for Transistor structure incorporating a solid deuterium source for

1998-07-22

2000-09-05

Hardy, David

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257 56, 257 58, 257 62, 438473, 438475, H01L 2976, H01L 2904, H01L 31062, H01L 31113, H01L 31119

Patent

active

061147346

ABSTRACT:
The present invention is a method for improving transistor channel hot carrier reliability by incorporating a solid deuterium source into the transistor structure. This is accomplished by using a deuterium containing source gas for formation of components of the transistor structure. A deuterium sinter, shown to improve channel hot carrier lifetime, is made a more viable process step by using deuterium as a source gas for formation of components made of silicon nitride. Additionally, time and/or temperature of the sinter may reduced. Incorporation of deuterium containing components which allow sufficient outdiffusion of deuterium may eliminate the need for a final deuterium sinter.

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