Deposition of titanium nitride films having improved uniformity

Details Deposition of titanium nitride films having improved uniformity Deposition of titanium nitride films having improved uniformity

1997-02-26

2000-06-06

Nelms, David

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438656, 438683, 438685, H01L 214763

Patent

active

060718110

ABSTRACT:
I have found that in order to improve sheet resistance uniformity of metal nitride films, such as titanium nitride, the chamber must be operated at low pressure. The nitrogen gas flow rates required to deposit metal nitride is determined, and the pumping speed in the chamber is increased to produce uniform films at low pressure.

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patent: 5618388 (1997-04-01), Seeser et al.
patent: 5801098 (1998-09-01), Fiordalice et al.

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