Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1998-05-15
2000-06-06
Niebling, John F.
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438238, 438647, 438653, 438675, 438685, 438637, 438643, 257296, 257751, 257767, H01L 218234, H01L 218242, H01L 214763, H01L 2144, H01L 2348
Patent
active
06071770&
ABSTRACT:
A semiconductor memory device suitable for forming a capacitor using a high dielectric film for a highly integrated semiconductor device includes a semiconductor substrate, an insulating film having a contact hole, the insulating film being over the semiconductor substrate, a conductive film on the semiconductor substrate through the contact hole, the conductive film having a top portion acting as a diffusion barrier, a first electrode over the conductive films, a dielectric film over the first electrode, and a second electrode over the dielectric film.
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LG Semicon Co. Ltd.
Nguyen Ha Tran
Niebling John F.
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