Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1998-02-03
2000-12-12
Clark, Sheila V.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257315, 257396, 257748, 257754, 257756, 257758, 257765, 257774, 257775, 257776, H01L 2976, H01L 2994
Patent
active
061602973
ABSTRACT:
A semiconductor device comprises select gates and control gates of a plurality of memory cells therebetween so that gate members on upper portions of stacked gates may cross element regions. A metal interconnection is disposed parallel to an upper layer of the element region. A source line SL is arranged at intervals of plural bit lines BL. The source line is led to a source line contact through a conductive member composed of a low-resistance metal in the same manner as a bit line contact.
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Aritome Seiichi
Shimizu Kazuhiro
Takeuchi Yuji
Watanabe Hiroshi
Watanabe Toshiharu
Clark Sheila V.
Kabushiki Kaisha Toshiba
Warren Matthew E.
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