Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1996-07-11
1997-09-16
Trinh, Michael
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
148DIG136, 438382, H01L 2170
Patent
active
056680376
ABSTRACT:
A method of forming a resistor from semiconductive material includes, a) providing a substrate; b) providing a layer of semiconductive material over the substrate; c) providing a pair of openings into the semiconductive material layer; d) plugging the pair of openings with an electrically conductive material to define a pair of electrically conductive pillars within the semiconductive material, the pair of pillars having semiconductive material extending therebetween to provide a resistor construction; and e) providing a conductive node to each of the electrically conductive pillars. An integrated circuit incorporating a resistor construction includes, i) a layer of semiconductive material; ii) a pair of electrically conductive pillars provided within the semiconductive material layer, the pair of pillars being separated from one another and thereby having a mass of the semiconductive material extending therebetween; and iii) an electrically conductive node in electrical connection with each of the respective conductive pillars. Alternately, a resistor is provided within a semiconductive substrate using different concentration diffusion regions.
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Ahmad Aftab
Fazan Pierre C.
Juengling Werner
Lowrey Tyler
Pan Pai-Hung
Micro)n Technology, Inc.
Trinh Michael
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