Multilayer metal structure for improved interconnect reliability

Details Multilayer metal structure for improved interconnect reliability Multilayer metal structure for improved interconnect reliability

1998-11-12

2000-12-12

Nelms, David

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438652, H01L 2144

Patent

active

06159847&

ABSTRACT:
AlCu alloys with higher Cu content are added in thin layers within a metallization structure. The increased Cu content provided by the thin layer improves interconnect reliability and reduces the effects of electromigration with minimal effect on plasma etch and cleanup processes.

REFERENCES:
patent: 5693568 (1997-12-01), Liu et al.
patent: 5814557 (1998-09-01), Venkatraman et al.
patent: 5880023 (1999-03-01), Jun
patent: 5998297 (1999-12-01), Brennan

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