Disposable sidewall oxidation fabrication method for making a tr

Details Disposable sidewall oxidation fabrication method for making a tr Disposable sidewall oxidation fabrication method for making a tr

1998-09-02

2000-12-12

Wojciechowicz, Edward

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438303, 438585, 438592, 438595, 438647, 438684, 438694, H01L 2972

Patent

active

061598046

ABSTRACT:
The present invention is directed to a method of making a transistor having a very short channel length. The method generally comprises forming a plurality of process layers above a surface of a semiconducting substrate, one of the process layers being comprised of a gate dielectric material and another of the process layers being comprised of a gate conductor material. The method further comprises patterning the plurality of process layers to define an opening and forming a first sidewall spacer in the opening adjacent at least the process layer comprised of a gate conductor material. The method continues with the formation of a gate conductor mask by oxidation of a portion of at least one of the process layers other than those layers comprised of a gate dielectric material and the gate conductor material. A portion of the process layer comprised of a gate conductor material is then removed to define a gate conductor positioned beneath the gate conductor mask, followed by the formation of a second sidewall spacer adjacent the gate conductor. Thereafter, at least one source/drain region is formed to complete the transistor formation. The present invention further comprises a transistor having a channel length of less than 1000 .ANG..

REFERENCES:
patent: 6037228 (2000-03-01), Hsu

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