Stacked capacitor of a DRAM cell with fin-shaped electrodes havi

Details Stacked capacitor of a DRAM cell with fin-shaped electrodes havi Stacked capacitor of a DRAM cell with fin-shaped electrodes havi

1990-09-28

1993-02-16

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

H01L 2968, H01L 2702

Patent

active

051875489

ABSTRACT:
There is disclosed a stacked capacitor comprising a fin-shaped storage electrode of multiple polysilicon layers with supporting layers therebetween so as to compensate for the structural weakness of the fin-shaped storage electrode.

REFERENCES:
patent: 4700457 (1987-10-01), Matsukawa
patent: 4953126 (1990-08-01), Ema
patent: 4974040 (1990-11-01), Taguchi et al.
patent: 4985718 (1991-01-01), Ishijima
patent: 5006481 (1991-04-01), Chan et al.
patent: 5103275 (1992-04-01), Miura et al.

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