Method of forming titanium silicide and titanium by chemical vap

Details Method of forming titanium silicide and titanium by chemical vap Method of forming titanium silicide and titanium by chemical vap

Filed on

1997-08-21

Date issued

1999-11-02

Examiner

Bowers, Charles

Patent Class

Semiconductor device manufacturing: process

SubClass

Coating with electrically or thermally conductive material

SubSubClass

To form ohmic contact to semiconductive material

Other Related Categories

H01L 2144

Type

Patent

Status

active

Patent number

059769769

Description

ABSTRACT:
A method is provided for forming a contact in an integrated circuit by chemical vapor deposition (CVD). In one embodiment, a titanium precursor and a silicon precursor are contacted in the presence of hydrogen, to form titanium silicide. In another embodiment, a titanium precursor contacts silicon to form to form titanium silicide.

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