Step coverage and overhang improvement by pedestal bias voltage

Details Step coverage and overhang improvement by pedestal bias voltage Step coverage and overhang improvement by pedestal bias voltage

1997-12-12

1999-11-02

Diamond, Alan

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

20419212, 20419213, 20429803, 20429806, C23C 1434

Patent

active

059763272

ABSTRACT:
The invention provides a method for depositing a metal film on a substrate, comprising generating a high density plasma in a chamber, sputtering metal particles from a target to the substrate, and applying a modulated radio frequency (RF) bias to the substrate during deposition. Another aspect of the invention provides an apparatus for depositing a metal film on a substrate comprising a high density plasma physical vapor deposition (HDP PVD) chamber and a controller to modulate a RF bias power applied to a substrate in the chamber.

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