Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1997-07-29
1999-03-23
Bowers, Charles
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438226, 438225, 257345, H01L 2910, H01L 21265, H01L 2120
Patent
active
058858768
ABSTRACT:
A Fermi-FET includes a drain field termination region between the source and drain regions, to reduce and preferably prevent injection of carriers from the source region into the channel as a result of drain bias. The drain field terminating region prevents excessive drain induced barrier lowering while still allowing low vertical field in the channel. The drain field terminating region is preferably embodied by a buried counterdoped layer between the source and drain regions, extending beneath the substrate surface from the source region to the drain region. The buried counterdoped layer may be formed using a three tub structure which produces three layers between the spaced apart source and drain regions. The drain field terminating region may also be used in a conventional MOSFET. The channel region is preferably formed by epitaxial deposition, so that the channel region need not be counterdoped relative to the drain field terminating region. Higher carrier mobility in the channel may thereby be obtained for a given doping level.
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Blum David S
Bowers Charles
Thunderbird Technologies, Inc.
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