Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1992-09-14
1994-05-03
Hille, Rolf
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257214, 257314, H01L 2702
Patent
active
053090098
ABSTRACT:
An analog MOS transistor device allows the user to set the threshold characteristics of the device. This transistor device is fabricated using conventional CMOS fabrication materials and methods. An insulated gate spans across a source junction, a drain junction, and a control junction. This gate can be charged or discharged to a desired voltage level by injecting or removing charge at the insulated gate. The insulated gate has no conductor connection, and is only capacitively coupled to the source junction, drain junction and control junction. The user sets the voltage on the insulated gate, then varies the voltage impressed on the control junction as the application requires. The user can set the channel conductivity characteristics of the device by setting the charge level on the insulated gate, and by varying the voltage on the control junction, both of which may be dynamically adjusted in-circuit.
REFERENCES:
patent: 4649520 (1987-03-01), Eitan
patent: 4924278 (1990-05-01), Logie
patent: 5089433 (1992-02-01), Anand et al.
patent: 5198691 (1993-03-01), Tarng
patent: 5216269 (1993-06-01), Middelhoek et al.
Hille Rolf
Ostrowski David
Weiss Harry M.
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