Method for anisotropic plasma etching of substrates

Details Method for anisotropic plasma etching of substrates Method for anisotropic plasma etching of substrates

1994-05-17

1996-03-12

Dang, Thi

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

1566461, 1566621, 216 69, 216 67, H01L 2100, H05H 100

Patent

active

054983126

ABSTRACT:
A method for anisotropic plasma etching of silicon substrates, a plasma etching apparatus for implementing the method, and an electronic device manufactured according to the method, which method includes the steps of positioning a substrate having a surface to be depleted by etching within a processing chamber and in communication with an electrode; introducing a gas mixture including an etching gas and a passivating gas which are essentially free of chlorine, bromine or iodine into the processing chamber, the etching gas including at least one halogen or halogen compound and the passivating gas including at least one polymer-generating monomer; exciting the gas mixture with electromagnetic radiation effective to produce a plasma containing ions; and applying a voltage to one of the substrate or the electrode to accelerate the ions toward the substrate and provide the ions with an energy ranging from about 1 to about 40 eV, preferably from about 10 to about 30 eV, when the ions impinge on the surface of the substrate.

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