Integral Bi-CMOS logic circuit

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

257378, 257567, 257577, H01L 2702

Patent

active

051722097

ABSTRACT:
An integral Bi-CMOS logic circuit includes a pair of first transistors and a pair of second transistors. The pair of the first transistors includes a P-type MOS transistor receiving an input signal through its gate, and an NPN-type bipolar transistor with its base connected to the drain of the P-type MOS transistor outputting a first output signal. The pair of the second transistors includes an N-type MOS transistor receiving the input signal through its gate, and a PNP bipolar transistor with its base connected to the drain of the N-type MOS transistor outputting the first output signal. A final output signal is outputted through a common emitter of the bipolar transistors.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Integral Bi-CMOS logic circuit does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Integral Bi-CMOS logic circuit, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Integral Bi-CMOS logic circuit will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2097719

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.