Multi-step plasma treatment process for forming low resistance t

Details Multi-step plasma treatment process for forming low resistance t Multi-step plasma treatment process for forming low resistance t

1997-07-23

1999-10-19

Everhart, Caridad

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438681, 438685, 438909, H01L 2144

Patent

active

059703784

ABSTRACT:
A method for forming a titanium nitride layer within an integrated circuit. There is first provided a substrate. There is then formed over the substrate a virgin titanium nitride layer, where the virgin titanium nitride layer is formed through a chemical vapor deposition (CVD) method employing a tetrakis-diallylamido titanium source material without a halogen activator source material. The virgin titanium nitride layer is then annealed in a first plasma comprising nitrogen and hydrogen to form a refined titanium nitride layer. The refined titanium nitride layer is then annealed in a second plasma comprising nitrogen without hydrogen. Through the method there is formed a titanium nitride layer with superior step coverage, low resistivity and low impurities concentration.

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patent: 5576071 (1996-11-01), Sandhu
patent: 5723382 (1998-03-01), Sandhu et al.

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