Semiconductor device having a thin gate oxide and method of manu

Details Semiconductor device having a thin gate oxide and method of manu Semiconductor device having a thin gate oxide and method of manu

1996-12-05

1999-10-19

Mulpuri, Savitri

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

591766, 591787, H01L 21336

Patent

active

059703504

ABSTRACT:
A process for fabricating a device having a thin gate oxide layer on which a gate electrode is formed is disclosed. The thin gate oxide layer is formed using an ion implantation process in order to reliably control the thickness of the gate oxide layer. A nitrogen-containing species is used in the ion implantation in order to form a nitrogen rich oxide layer and to increase the reliability and performance of a resultant device.

REFERENCES:
patent: 4105805 (1978-08-01), Glendinning et al.
patent: 4706377 (1987-11-01), Shuskus
patent: 4774197 (1988-09-01), Haddad et al.
patent: 4914046 (1990-04-01), Tobin et al.
patent: 5266502 (1993-11-01), Okada et al.
patent: 5330920 (1994-07-01), Soleimani et al.
patent: 5441899 (1995-08-01), Nakai et al.
patent: 5468657 (1995-11-01), Hsu
patent: 5488004 (1996-01-01), Yang
patent: 5508215 (1996-04-01), Jeng
patent: 5589407 (1996-12-01), Meyyappan et al.
patent: 5891798 (1999-04-01), Doyle et al.
patent: 5908312 (1999-06-01), Cheung et al.

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