Semiconductor device having one or more asymmetric background do

Details Semiconductor device having one or more asymmetric background do Semiconductor device having one or more asymmetric background do

1998-08-24

1999-10-19

Chaudhuri, Olik

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438289, H01L 2978, H01L 21266

Patent

active

059703490

ABSTRACT:
Semiconductor devices having one or more asymmetric background dopant regions and methods of fabrication thereof are provided. The asymmetric background dopant regions may be formed using a patterned mask with wider openings than conventional masks while substantially maintaining device performance. This can, for example, facilitate the fabrication process and allow greater flexibility in the choice of photolithography tools.

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patent: 3936857 (1976-02-01), Ota
patent: 4011105 (1977-03-01), Paivinen et al.
patent: 4541166 (1985-09-01), Yamazaki
patent: 5578509 (1996-11-01), Fujita
patent: 5691213 (1997-11-01), Chang et al.
patent: 5830788 (1998-11-01), Hiroki et al.

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