Method of forming high capacitive-coupling ratio and high speed

Details Method of forming high capacitive-coupling ratio and high speed Method of forming high capacitive-coupling ratio and high speed

1998-03-06

1999-10-19

Monin, Jr., Donald L.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438264, H01L 21316, H01L 218247

Patent

active

059703423

ABSTRACT:
The method of the present invention includes patterning a gate structure. Then, a polyoxide layer is formed on side walls of the gate structure. Then, silicon nitride side wall spacers is formed on the side walls of the gate structure. Then, source/drain structure of the device is fabricated. Next, the side wall spacers is removed to expose a portion of the source and drain. Then, an undoped amorphous silicon layer is formed on the surface of the gate structure, the oxide layer and the exposed source and drain. A dry oxidation process is used to convert the amorphous silicon layer into textured tunnel oxide at the interface of the substrate and the oxide. Polysilicon side wall spacers are then formed. A further polysilicon layer is subsequently deposited over the gate. Then, the polysilicon layer is patterned to define the floating gate. A dielectric is formed at the top of the floating gate. A conductive layer is formed on the dielectric layer as control gate.

REFERENCES:
patent: 5352619 (1994-10-01), Hong
patent: 5427970 (1995-06-01), Hsue et al.
patent: 5460991 (1995-10-01), Hong
Shirai et al., "A 054um.sup.2 Self-Aligned, HSG Floating Gate Cell (SAHF Cell) for 256Mbit Flash Memories", IEDM Tech. Dig., pp. 653-656, 1995.

Affiliated with

Also associated with

Rating

Method of forming high capacitive-coupling ratio and high speed does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming high capacitive-coupling ratio and high speed , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming high capacitive-coupling ratio and high speed will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2068409