Method of producing an EEPROM semiconductor structure

Details Method of producing an EEPROM semiconductor structure Method of producing an EEPROM semiconductor structure

1998-03-02

1999-10-19

Trinh, Michael

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438152, 438238, 438384, 438393, 438258, H01L 218242

Patent

active

059703385

ABSTRACT:
An EEPROM semiconductor structure is produced with a resistor, a thin-film transistor, a capacitor, and a transistor. The individual implantation steps are utilized to create various structures and, as a result, the production process is substantially simplified.

REFERENCES:
patent: 4212684 (1980-07-01), Brower
patent: 4682402 (1987-07-01), Yamaguchi
patent: 5338956 (1994-08-01), Nakamura
patent: 5457062 (1995-10-01), Keller et al.
patent: 5489547 (1996-02-01), Erdeljac et al.
patent: 5500387 (1996-03-01), Tung et al.
patent: 5701025 (1997-12-01), Yoshimori
"A Simple EEPROM Cell Using Twin Polysilicon Thin Film Transistors", Cao et al., IEEE Electron Device Letters, vol. 15, No. 8, Aug. 1994.

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